MOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 double island package
Products specifications
Technology | Si |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Channel Mode | Enhancement |
Tradename | STripFET |
Pd - Power Dissipation | 55 W |
Number of Channels | 2 Channel |
Configuration | Dual |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 31 mOhms |
Id - Continuous Drain Current | 32 A |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Maximum Operating Temperature | + 175 C |
Qualification | AEC-Q101 |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 27 nC |