MOSFET Automotive-grade N-channel 30 V, 0.004 Ohm typ., 80 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
Products specifications
Vds - Drain-Source Breakdown Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 5.2 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 17 nC |
Pd - Power Dissipation | 60 W |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qualification | AEC-Q101 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 80 A |
Technology | Si |
Configuration | Single |
Channel Mode | Enhancement |