MOSFET Automotive-grade N-channel 60 V, 35 mOhm typ., 6.5 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 package
Products specifications
Technology | Si |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 20 A |
Configuration | Single |
Qualification | AEC-Q101 |
Tradename | STripFET |
Pd - Power Dissipation | 52 W |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 8.7 nC |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 35 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 175 C |