MOSFETs N-channel 800 V, 2.1 Ohm typ 2 A MDmesh K5 Power MOSFET
Products specifications
Vds - Drain-Source Breakdown Voltage | 800 V |
Rds On - Drain-Source Resistance | 2.1 Ohms |
Transistor Polarity | N-Channel |
Packaging | Reel |
Qg - Gate Charge | 4 nC |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |
Configuration | Single |
Pd - Power Dissipation | 38 W |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Id - Continuous Drain Current | 3 A |