MOSFETs N-channel 600 V, 91 mOhm typ 25 A MDmesh M6 Power MOSFET
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Qg - Gate Charge | 44.3 nC |
Id - Continuous Drain Current | 25 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 160 W |
Rds On - Drain-Source Resistance | 110 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3.25 V |
Configuration | Single |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 600 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |