MOSFETs N-channel 600 V, 115 mOhm typ 21 A MDmesh M6 Power MOSFET
Products specifications
Pd - Power Dissipation | 150 W |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Configuration | Single |
Id - Continuous Drain Current | 21 A |
Vgs th - Gate-Source Threshold Voltage | 3.25 V |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 33.4 nC |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Rds On - Drain-Source Resistance | 0.137 Ohms |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |