MOSFET N-Ch 600V 0.150 Ohm 19.5 A Fdmesh II
Products specifications
Qg - Gate Charge | 70 nC |
Transistor Polarity | N-Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Rds On - Drain-Source Resistance | 150 mOhms |
Id - Continuous Drain Current | 19.5 A |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 25 V |
Pd - Power Dissipation | 3 W |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Technology | Si |