MOSFET N-Ch 500V 0.170Ohm 14A pwr MOSFET
Products specifications
Vds - Drain-Source Breakdown Voltage | 550 V |
Transistor Polarity | N-Channel |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 25 V |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 45 nC |
Configuration | Single |
Pd - Power Dissipation | 3 W |
Id - Continuous Drain Current | 14 A |
Tradename | MDmesh |
Rds On - Drain-Source Resistance | 210 mOhms |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 3 V |