MOSFET Dual N-channel 100 V, 0.065 Ohm typ., 5 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island
Products specifications
Vds - Drain-Source Breakdown Voltage | 100 V |
Qg - Gate Charge | 7.8 nC |
Technology | Si |
Number of Channels | 2 Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 4 W |
Configuration | Dual |
Tradename | STripFET |
Id - Continuous Drain Current | 5 A |
Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Vgs - Gate-Source Voltage | 20 V |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 67 mOhms |
Channel Mode | Enhancement |