STL19N60M2

MOSFET PTD HIGH VOLTAGE

SKU: STL19N60M2

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R 31.51

R 30.43

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MOSFETs N-channel 600 V, 0.278 Ohm typ 11 A MDmesh M2 Power MOSFET

Products specifications

Pd - Power Dissipation	90 W
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Tradename	MDmesh
Rds On - Drain-Source Resistance	278 mOhms
Id - Continuous Drain Current	11 A
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	21.5 nC
Number of Channels	1 Channel
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C

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Products specifications

Pd - Power Dissipation	90 W
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Tradename	MDmesh
Rds On - Drain-Source Resistance	278 mOhms
Id - Continuous Drain Current	11 A
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	21.5 nC
Number of Channels	1 Channel
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C