STL19N60DM2

MOSFET

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MOSFETs PTD HIGH VOLTAGE
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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	320 mOhms
Pd - Power Dissipation	90 W
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	21 nC
Id - Continuous Drain Current	11 A
Vds - Drain-Source Breakdown Voltage	650 V
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	320 mOhms
Pd - Power Dissipation	90 W
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	21 nC
Id - Continuous Drain Current	11 A
Vds - Drain-Source Breakdown Voltage	650 V
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel