MOSFETs N-channel 650 V, 0.290 Ohm typ 8 A MDmesh M2 Power MOSFET
Lead Time: 112 Days
Products specifications
Tradename | MDmesh |
Technology | Si |
Qg - Gate Charge | 21.5 nC |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 290 mOhms |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 8 A |
Vds - Drain-Source Breakdown Voltage | 650 V |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 57 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Configuration | Single |
Vgs - Gate-Source Voltage | 25 V |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |