MOSFETs N-channel 600 V, 0.278 Ohm typ 9 A MDmesh M2 Power MOSFET
Products specifications
Channel Mode | Enhancement |
Technology | Si |
Pd - Power Dissipation | 57 W |
Configuration | Single |
Rds On - Drain-Source Resistance | 308 mOhms |
Number of Channels | 1 Channel |
Qg - Gate Charge | 21.5 nC |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 9 A |
Maximum Operating Temperature | + 150 C |
Tradename | MDmesh |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 25 V |