MOSFETs N-channel 650 V, 0.365 Ohm typ 6.5 A MDmesh M2 Power MOSFET
Products specifications
Vgs - Gate-Source Voltage | 25 V |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 17 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 6.5 A |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 52 W |
Vds - Drain-Source Breakdown Voltage | 650 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 365 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Tradename | MDmesh |