STL13DP10F6

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MOSFET Dual P-channel 100 V, 0.136 Ohm typ., 3.3 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 double island

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MOSFET Dual P-channel 100 V, 0.136 Ohm typ., 3.3 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 double island

Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	16.5 nC
Number of Channels	2 Channel
Configuration	Dual
Id - Continuous Drain Current	3.3 A
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	4 V
Transistor Polarity	P-Channel
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	4 W
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	180 mOhms
Technology	Si

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Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	16.5 nC
Number of Channels	2 Channel
Configuration	Dual
Id - Continuous Drain Current	3.3 A
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	4 V
Transistor Polarity	P-Channel
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	4 W
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	180 mOhms
Technology	Si