MOSFETs N-channel 100 V, 11.3 mOhm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
Products specifications
Minimum Operating Temperature | - 55 C |
Technology | Si |
Tradename | STripFET |
Vds - Drain-Source Breakdown Voltage | 100 V |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 13.3 mOhms |
Id - Continuous Drain Current | 44 A |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 30 nC |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 52 W |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Configuration | Single |