STL11N6F7

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MOSFET N-channel 60 V, 10 mOhm typ., 11 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

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MOSFET N-channel 60 V, 10 mOhm typ., 11 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

Products specifications

Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	17 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	12 mOhms
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Tradename	STripFET
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Id - Continuous Drain Current	11 A
Technology	Si
Pd - Power Dissipation	48 W
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement

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Products specifications

Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	17 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	12 mOhms
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Tradename	STripFET
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Id - Continuous Drain Current	11 A
Technology	Si
Pd - Power Dissipation	48 W
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement