STL11N3LLH6

MOSFET N-Ch 30V 0.006 Ohm 11A STripFET VI Deep

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MOSFETs N-Ch 30V 0.006 Ohm 11A STripFET VI Deep
Lead Time: 182 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	17 nC
Pd - Power Dissipation	50 W
Tradename	STripFET
Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Id - Continuous Drain Current	11 A
Rds On - Drain-Source Resistance	6 mOhms
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	17 nC
Pd - Power Dissipation	50 W
Tradename	STripFET
Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Id - Continuous Drain Current	11 A
Rds On - Drain-Source Resistance	6 mOhms
Number of Channels	1 Channel
Transistor Polarity	N-Channel