STL10N60M2

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MOSFET N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package

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MOSFET N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package

Products specifications

Number of Channels	1 Channel
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Pd - Power Dissipation	48 W
Qg - Gate Charge	13.5 nC
Rds On - Drain-Source Resistance	660 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Id - Continuous Drain Current	5.5 A

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Products specifications

Number of Channels	1 Channel
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Pd - Power Dissipation	48 W
Qg - Gate Charge	13.5 nC
Rds On - Drain-Source Resistance	660 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Id - Continuous Drain Current	5.5 A