MOSFETs N-channel 80 V, 5.2 mOhm typ 100 A STripFET F7 Power MOSFET
Lead Time: 182 Days
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 46.8 nC |
Id - Continuous Drain Current | 100 A |
Vds - Drain-Source Breakdown Voltage | 80 V |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, MouseReel, Reel |
Tradename | STripFET |
Rds On - Drain-Source Resistance | 6.1 mOhms |
Pd - Power Dissipation | 120 W |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |