STI76NF75

MOSFET POWER MOSFET

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MOSFETs N-channel 75 V, 0.0095 Ohm, 80 A I2PAKSTripFET II Power MOSFET
Lead Time: 0 Days

Products specifications

Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	75 V
Rds On - Drain-Source Resistance	9.5 mOhms
Qg - Gate Charge	160 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	80 A
Channel Mode	Enhancement
Pd - Power Dissipation	300 W
Qualification	AEC-Q101
Technology	Si

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Products specifications

Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	75 V
Rds On - Drain-Source Resistance	9.5 mOhms
Qg - Gate Charge	160 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	80 A
Channel Mode	Enhancement
Pd - Power Dissipation	300 W
Qualification	AEC-Q101
Technology	Si