STI6N90K5

MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an I2PAK package

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MOSFETs N-channel 900 V, 0.91 Ohm typ 6 A MDmesh K5 Power MOSFET in an I2PAK package
Lead Time: 98 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	900 V
Channel Mode	Enhancement
Id - Continuous Drain Current	6 A
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	910 mOhms
Transistor Polarity	N-Channel
Technology	Si
Pd - Power Dissipation	110 W
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	11 nC
Tradename	MDmesh

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Products specifications

Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	900 V
Channel Mode	Enhancement
Id - Continuous Drain Current	6 A
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	910 mOhms
Transistor Polarity	N-Channel
Technology	Si
Pd - Power Dissipation	110 W
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	11 nC
Tradename	MDmesh