STI6N80K5

MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAK package

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R 26.44

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MOSFETs N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET in an I2PAK package

Products specifications

Vds - Drain-Source Breakdown Voltage	800 V
Pd - Power Dissipation	110 W
Tradename	MDmesh
Packaging	Tube
Rds On - Drain-Source Resistance	1.6 Ohms
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	4.5 A
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	7.5 nC
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single
Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	30 V

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Products specifications

Vds - Drain-Source Breakdown Voltage	800 V
Pd - Power Dissipation	110 W
Tradename	MDmesh
Packaging	Tube
Rds On - Drain-Source Resistance	1.6 Ohms
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	4.5 A
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	7.5 nC
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single
Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	30 V