STI55NF03L

MOSFET N-channel 30 V, 0.01 Ohm, 55 A, I2PAK STripFET(TM) II Power MOSFET

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MOSFETs N-channel 30 V, 0.01 Ohm, 55 A, I2PAK STripFET II Power MOSFET
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Products specifications

Vgs - Gate-Source Voltage	16 V
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	1.5 V
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Single
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	10 mOhms
Id - Continuous Drain Current	55 A
Pd - Power Dissipation	80 W
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Qualification	AEC-Q101
Minimum Operating Temperature	- 60 C
Packaging	Tube
Qg - Gate Charge	27 nC
Technology	Si
Tradename	STripFET

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Products specifications

Vgs - Gate-Source Voltage	16 V
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	1.5 V
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Single
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	10 mOhms
Id - Continuous Drain Current	55 A
Pd - Power Dissipation	80 W
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Qualification	AEC-Q101
Minimum Operating Temperature	- 60 C
Packaging	Tube
Qg - Gate Charge	27 nC
Technology	Si
Tradename	STripFET