STI4N62K3

MOSFET N-channel 620 V 17 Pwr MOSFET

Availability: 886 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

100+

500+

1000+

2000+

5000+

Price

R 22.38

R 19.04

R 16.16

R 14.62

R 12.71

R 12.47

R 12.44

Free shipping

MOSFETs N-channel 620 V 17 Pwr MOSFET
Lead Time: 91 Days

Products specifications

Rds On - Drain-Source Resistance	2 Ohms
Qg - Gate Charge	22 nC
Id - Continuous Drain Current	3.8 A
Configuration	Single
Vds - Drain-Source Breakdown Voltage	620 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Tradename	SuperMESH
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Packaging	Tube
Pd - Power Dissipation	70 W
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3.75 V

Your name *

Your email *

Enquiry *

Products specifications

Rds On - Drain-Source Resistance	2 Ohms
Qg - Gate Charge	22 nC
Id - Continuous Drain Current	3.8 A
Configuration	Single
Vds - Drain-Source Breakdown Voltage	620 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Tradename	SuperMESH
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Packaging	Tube
Pd - Power Dissipation	70 W
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3.75 V