MOSFET N-channel 100 V 0013 Ohm 45 A Pwr MOSFET
Products specifications
Pd - Power Dissipation | 60 W |
Configuration | Single |
Packaging | Tube |
Rds On - Drain-Source Resistance | 18 mOhms |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Tradename | STripFET |
Technology | Si |
Number of Channels | 1 Channel |
Qg - Gate Charge | 25 nC |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 100 V |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 175 C |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 45 A |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |