STI40N65M2

R 1.00

MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

Availability: Out of stock

Qty:

Free shipping

MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W
Qg - Gate Charge	56.5 nC
Id - Continuous Drain Current	32 A
Rds On - Drain-Source Resistance	87 mOhms
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Channel Mode	Enhancement
Packaging	Tube
Technology	Si
Mounting Style	Through Hole
Configuration	Single

Your name *

Your email *

Enquiry *

Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W
Qg - Gate Charge	56.5 nC
Id - Continuous Drain Current	32 A
Rds On - Drain-Source Resistance	87 mOhms
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Channel Mode	Enhancement
Packaging	Tube
Technology	Si
Mounting Style	Through Hole
Configuration	Single