STI33N65M2

R 1.00

MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package

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MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package

Products specifications

Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	117 mOhms
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Qg - Gate Charge	41.5 nC
Packaging	Tube
Technology	Si
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	24 A
Configuration	Single
Channel Mode	Enhancement
Pd - Power Dissipation	190 W

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Products specifications

Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	117 mOhms
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Qg - Gate Charge	41.5 nC
Packaging	Tube
Technology	Si
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	24 A
Configuration	Single
Channel Mode	Enhancement
Pd - Power Dissipation	190 W