STI33N60M2

R 1.00

MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package

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MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package

Products specifications

Qg - Gate Charge	45.5 nC
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	125 mOhms
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	190 W
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Id - Continuous Drain Current	26 A
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Packaging	Tube
Tradename	MDmesh

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Products specifications

Qg - Gate Charge	45.5 nC
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	125 mOhms
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	190 W
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Id - Continuous Drain Current	26 A
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Packaging	Tube
Tradename	MDmesh