MOSFET N-Ch 600 V 0.168 Ohm 18 A MDmesh M2
Products specifications
Rds On - Drain-Source Resistance | 168 mOhms |
Configuration | Single |
Qg - Gate Charge | 29 nC |
Channel Mode | Enhancement |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 18 A |
Packaging | Tube |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vgs - Gate-Source Voltage | 25 V |
Pd - Power Dissipation | 150 W |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Tradename | MDmesh |