STI18N65M2

R 1.00

MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Id - Continuous Drain Current	12 A
Mounting Style	Through Hole
Channel Mode	Enhancement
Pd - Power Dissipation	110 W
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Rds On - Drain-Source Resistance	275 mOhms
Technology	Si
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	20 nC
Configuration	Single
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Tradename	MDmesh

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Products specifications

Id - Continuous Drain Current	12 A
Mounting Style	Through Hole
Channel Mode	Enhancement
Pd - Power Dissipation	110 W
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Rds On - Drain-Source Resistance	275 mOhms
Technology	Si
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	20 nC
Configuration	Single
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Tradename	MDmesh