STI150N10F7

R 1.00

MOSFET N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package

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MOSFET N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package

Products specifications

Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	4.2 mOhms
Configuration	Single
Packaging	Tube
Mounting Style	Through Hole
Pd - Power Dissipation	250 W
Vgs th - Gate-Source Threshold Voltage	4.5 V
Technology	Si
Minimum Operating Temperature	- 55 C
Tradename	STripFET
Channel Mode	Enhancement
Qg - Gate Charge	117 nC
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	110 A
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	4.2 mOhms
Configuration	Single
Packaging	Tube
Mounting Style	Through Hole
Pd - Power Dissipation	250 W
Vgs th - Gate-Source Threshold Voltage	4.5 V
Technology	Si
Minimum Operating Temperature	- 55 C
Tradename	STripFET
Channel Mode	Enhancement
Qg - Gate Charge	117 nC
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	110 A
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel