MOSFET N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
Products specifications
Technology | Si |
Number of Channels | 1 Channel |
Tradename | MDmesh |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 30 nC |
Pd - Power Dissipation | 90 W |
Packaging | Tube |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 25 V |
Id - Continuous Drain Current | 11 A |
Rds On - Drain-Source Resistance | 360 mOhms |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |