STH80N10F7-2

R 1.00

MOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

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MOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

Products specifications

Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	100 V
Pd - Power Dissipation	110 W
Maximum Operating Temperature	+ 175 C
Technology	Si
Tradename	STripFET
Rds On - Drain-Source Resistance	9.5 mOhms
Id - Continuous Drain Current	80 A
Configuration	Single
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Qg - Gate Charge	45 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	4.5 V

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Products specifications

Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	100 V
Pd - Power Dissipation	110 W
Maximum Operating Temperature	+ 175 C
Technology	Si
Tradename	STripFET
Rds On - Drain-Source Resistance	9.5 mOhms
Id - Continuous Drain Current	80 A
Configuration	Single
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Qg - Gate Charge	45 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	4.5 V