STH6N95K5-2

R 1.00

MOSFET N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package

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MOSFET N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package

Products specifications

Pd - Power Dissipation	110 W
Tradename	MDmesh
Technology	Si
Qg - Gate Charge	13 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Rds On - Drain-Source Resistance	1.25 Ohms
Id - Continuous Drain Current	6 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	950 V
Channel Mode	Enhancement

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Products specifications

Pd - Power Dissipation	110 W
Tradename	MDmesh
Technology	Si
Qg - Gate Charge	13 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Rds On - Drain-Source Resistance	1.25 Ohms
Id - Continuous Drain Current	6 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	950 V
Channel Mode	Enhancement