STH410N4F7-2AG

R 1.00

MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package

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MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package

Products specifications

Configuration	Single
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	4 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	365 W
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	40 V
Channel Mode	Enhancement
Id - Continuous Drain Current	200 A
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	1.1 mOhms
Technology	Si
Vds - Drain-Source Breakdown Voltage	40 V
Qg - Gate Charge	120 nC
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Configuration	Single
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	4 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	365 W
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	40 V
Channel Mode	Enhancement
Id - Continuous Drain Current	200 A
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	1.1 mOhms
Technology	Si
Vds - Drain-Source Breakdown Voltage	40 V
Qg - Gate Charge	120 nC
Packaging	Cut Tape, MouseReel, Reel