STH315N10F7-6

R 1.00

MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

Availability: Out of stock

Qty:

Free shipping

MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

Products specifications

Vgs th - Gate-Source Threshold Voltage	3.5 V
Id - Continuous Drain Current	180 A
Number of Channels	1 Channel
Pd - Power Dissipation	315 W
Maximum Operating Temperature	+ 175 C
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Technology	Si
Configuration	Single
Vds - Drain-Source Breakdown Voltage	100 V
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	2.3 mOhms
Qg - Gate Charge	180 nC
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Tradename	STripFET

Your name *

Your email *

Enquiry *

Products specifications

Vgs th - Gate-Source Threshold Voltage	3.5 V
Id - Continuous Drain Current	180 A
Number of Channels	1 Channel
Pd - Power Dissipation	315 W
Maximum Operating Temperature	+ 175 C
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Technology	Si
Configuration	Single
Vds - Drain-Source Breakdown Voltage	100 V
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	2.3 mOhms
Qg - Gate Charge	180 nC
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Tradename	STripFET