STH315N10F7-2

R 1.00

MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

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MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Products specifications

Id - Continuous Drain Current	180 A
Vgs th - Gate-Source Threshold Voltage	3.5 V
Qualification	AEC-Q101
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	315 W
Transistor Polarity	N-Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	1 Channel
Qg - Gate Charge	180 nC
Tradename	STripFET
Configuration	Single
Vds - Drain-Source Breakdown Voltage	100 V
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	2.3 mOhms

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Products specifications

Id - Continuous Drain Current	180 A
Vgs th - Gate-Source Threshold Voltage	3.5 V
Qualification	AEC-Q101
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	315 W
Transistor Polarity	N-Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	1 Channel
Qg - Gate Charge	180 nC
Tradename	STripFET
Configuration	Single
Vds - Drain-Source Breakdown Voltage	100 V
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	2.3 mOhms