STH290N4F6-2AG

R 1.00

MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

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MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Rds On - Drain-Source Resistance	1.7 mOhms
Qg - Gate Charge	115 nC
Minimum Operating Temperature	- 55 C
Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	180 A
Technology	Si
Tradename	STripFET
Pd - Power Dissipation	300 W
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 175 C

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Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Rds On - Drain-Source Resistance	1.7 mOhms
Qg - Gate Charge	115 nC
Minimum Operating Temperature	- 55 C
Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	180 A
Technology	Si
Tradename	STripFET
Pd - Power Dissipation	300 W
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 175 C