STH275N8F7-6AG

R 1.00

MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

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MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

Products specifications

Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	1.7 mOhms
Vds - Drain-Source Breakdown Voltage	80 V
Qg - Gate Charge	193 nC
Transistor Polarity	N-Channel
Pd - Power Dissipation	315 W
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	180 A
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vgs - Gate-Source Voltage	20 V
Qualification	AEC-Q101
Tradename	STripFET
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	1.7 mOhms
Vds - Drain-Source Breakdown Voltage	80 V
Qg - Gate Charge	193 nC
Transistor Polarity	N-Channel
Pd - Power Dissipation	315 W
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	180 A
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vgs - Gate-Source Voltage	20 V
Qualification	AEC-Q101
Tradename	STripFET
Packaging	Cut Tape, MouseReel, Reel