MOSFET N-Ch 40 V 1.4 mOhm 180 A STripFET III
Products specifications
Minimum Operating Temperature | - 55 C |
Technology | Si |
Tradename | STripFET |
Qg - Gate Charge | 110 nC |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 1.4 mOhms |
Pd - Power Dissipation | 300 W |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Channel Mode | Enhancement |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 180 A |
Vds - Drain-Source Breakdown Voltage | 40 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |