MOSFET Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
Products specifications
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Qualification | AEC-Q101 |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |
Pd - Power Dissipation | 300 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Channel Mode | Enhancement |
Qg - Gate Charge | 183 nC |
Rds On - Drain-Source Resistance | 1.6 mOhms |
Vds - Drain-Source Breakdown Voltage | 60 V |
Tradename | STripFET |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 180 A |