STH260N6F6-6

R 1.00

MOSFET N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package

Availability: Out of stock

Qty:

Free shipping

MOSFET N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package

Products specifications

Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	183 nC
Number of Channels	1 Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	4 V
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Technology	Si
Configuration	Single
Tradename	STripFET
Id - Continuous Drain Current	180 A
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	300 W
Rds On - Drain-Source Resistance	2.4 mOhms

Your name *

Your email *

Enquiry *

Products specifications

Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	183 nC
Number of Channels	1 Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	4 V
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Technology	Si
Configuration	Single
Tradename	STripFET
Id - Continuous Drain Current	180 A
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	300 W
Rds On - Drain-Source Resistance	2.4 mOhms