STH240N10F7-2

R 1.00

MOSFET N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package

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MOSFET N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package

Products specifications

Rds On - Drain-Source Resistance	2.5 mOhms
Maximum Operating Temperature	+ 175 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2.5 V
Id - Continuous Drain Current	180 A
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement
Number of Channels	1 Channel
Qg - Gate Charge	160 nC
Pd - Power Dissipation	300 W
Tradename	STripFET
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si

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Products specifications

Rds On - Drain-Source Resistance	2.5 mOhms
Maximum Operating Temperature	+ 175 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2.5 V
Id - Continuous Drain Current	180 A
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement
Number of Channels	1 Channel
Qg - Gate Charge	160 nC
Pd - Power Dissipation	300 W
Tradename	STripFET
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si