STH185N10F3-6

R 1.00

MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package

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MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package

Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	180 A
Configuration	Single
Rds On - Drain-Source Resistance	3.9 mOhms
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	114.6 nC
Channel Mode	Enhancement
Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	315 W
Tradename	STripFET
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V

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Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	180 A
Configuration	Single
Rds On - Drain-Source Resistance	3.9 mOhms
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	114.6 nC
Channel Mode	Enhancement
Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	315 W
Tradename	STripFET
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V