STH185N10F3-2

R 1.00

MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

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MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	100 V
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Qualification	AEC-Q101
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	180 A
Channel Mode	Enhancement
Qg - Gate Charge	114.6 nC
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	315 W
Rds On - Drain-Source Resistance	4.5 mOhms
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	100 V
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Qualification	AEC-Q101
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	180 A
Channel Mode	Enhancement
Qg - Gate Charge	114.6 nC
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	315 W
Rds On - Drain-Source Resistance	4.5 mOhms
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel