STH175N4F6-6AG

R 1.00

MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package

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MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package

Products specifications

Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	130 nC
Vds - Drain-Source Breakdown Voltage	40 V
Number of Channels	1 Channel
Tradename	STripFET
Pd - Power Dissipation	150 W
Rds On - Drain-Source Resistance	1.9 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	120 A
Transistor Polarity	N-Channel
Technology	Si
Qualification	AEC-Q101

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Products specifications

Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	130 nC
Vds - Drain-Source Breakdown Voltage	40 V
Number of Channels	1 Channel
Tradename	STripFET
Pd - Power Dissipation	150 W
Rds On - Drain-Source Resistance	1.9 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	120 A
Transistor Polarity	N-Channel
Technology	Si
Qualification	AEC-Q101