STH175N4F6-2AG

R 1.00

MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package

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MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package

Products specifications

Rds On - Drain-Source Resistance	1.9 mOhms
Qualification	AEC-Q101
Vgs - Gate-Source Voltage	20 V
Channel Mode	Enhancement
Qg - Gate Charge	130 nC
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	40 V
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	150 W
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	120 A
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C

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Products specifications

Rds On - Drain-Source Resistance	1.9 mOhms
Qualification	AEC-Q101
Vgs - Gate-Source Voltage	20 V
Channel Mode	Enhancement
Qg - Gate Charge	130 nC
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	40 V
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	150 W
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	120 A
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C