STH170N8F7-2

R 1.00

MOSFET N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package

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MOSFET N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package

Products specifications

Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	80 V
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	4.5 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	120 A
Configuration	Single
Rds On - Drain-Source Resistance	3.7 mOhms
Qg - Gate Charge	120 nC
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W

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Products specifications

Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	80 V
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	4.5 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	120 A
Configuration	Single
Rds On - Drain-Source Resistance	3.7 mOhms
Qg - Gate Charge	120 nC
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W