STH150N10F7-2

R 1.00

MOSFET N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

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MOSFET N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

Products specifications

Qg - Gate Charge	117 nC
Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	100 V
Rds On - Drain-Source Resistance	3.9 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	110 A
Vgs th - Gate-Source Threshold Voltage	4.5 V
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W

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Products specifications

Qg - Gate Charge	117 nC
Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	100 V
Rds On - Drain-Source Resistance	3.9 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	110 A
Vgs th - Gate-Source Threshold Voltage	4.5 V
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W